Observation of electron traps in electrochemically deposited CdTe films |
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| Authors: | BM Basol OM Stafsudd |
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| Affiliation: | Electrical Sciences and Engineering Department, University of California, Los Angeles, CA 90024, U.S.A. |
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| Abstract: | The I–V and C-V data of Schottky devices formed on electrodeposited n-CdTe films are interpreted to determine the principle trap energy and density. The observed trap is an electron trap located at 0.55 eV below the conduction band with a density of ～7 × 1015/cm3. This correlates well with the values reported for CdTe prepared by different methods. Nickel is found to be an injecting contact to electrodeposited CdTe films. Au/n-CdTe barrier height is determined to be 0.75–0.85 eV for Schottky devices. |
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