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1f noise in GaAs MESFETS
Authors:C.H. Suh  A. van der Ziel  R.P. Jindal
Affiliation:Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Abstract:An attempt was made to discriminate between number fluctuation and mobility fluctuation 1f noise in GaAs MESFETs. It was found, that both models could explain the data, even though the mobility fluctuation 1f model seems more likely.
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