Preparation of Fe-N films by r.f. sputtering |
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Authors: | Kiichi Oda Tetsuo Yoshio Kohei Oda |
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Affiliation: | (1) Research Institute for Non-Crystalline Materials, School of Engineering, Okayama University, 700 Okayama, Japan;(2) Department of Industrial Chemistry, Yonago National College of Technology, 683 Yonago, Japan |
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Abstract: | Fe-N films over a wide compositional range have been prepared by the reactive sputtering method. Fe-N sputtered films were composed of a single or two phases such as -Fe2N, -Fe3.02N,![gamma](/content/t72484163n716132/xxlarge947.gif) -Fe3.82N,![gamma](/content/t72484163n716132/xxlarge947.gif) -Fe4N and -Fe; however, an unknown phase was observed at a higher nitrogen pressure. A remarkable preferred orientation of the -Fe3.02N (110) plane parallel to the film surface was observed. The Curie temperature of the sputtered ![gamma](/content/t72484163n716132/xxlarge947.gif) -Fe3.82N sample was 490° C, which was almost the same as that of![gamma](/content/t72484163n716132/xxlarge947.gif) -Fe4N prepared by metal nitriding. The saturation magnetization,
s, of the sputtered Fe-N samples decreased from 151.8 to 42.4 e.m.u.g–1 with increasing nitrogen content from 7.94 to 24.87 at%, and its coercive force,1
H
c was found to lie in the range 150 to 600 Oe in the powder form at room temperature. |
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