PTFE nanoemulsions as ultralow-k dielectric materials |
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| Affiliation: | 1. Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China;2. Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;3. Institute of Theoretical Chemistry, Jilin University, Changchun 130023, China;1. Universidade Federal de São Carlos, Departamento de Física, Caixa Postal 676, 13565-905 São Carlos, SP, Brazil;2. Universidade Federal de São Carlos, Departamento de Engenharia de Materiais, Caixa Postal 676, 13565-905 São Carlos, SP, Brazil |
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| Abstract: | Modern integrated circuits require insulating materials with a dielectric constant as low as possible in order to obtain device speed improvements through lower RC delay. We have investigated the electrical and structural properties of PTFE thin films obtained from Algoflon®-PTFE nanoemulsions, via spin coating deposition, followed by sintering. Films as thin as 160 nm with dielectric strength better than 4 MV/cm have been obtained. Breakdown mechanism is also discussed. |
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