Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers |
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| Affiliation: | 1. CEMES – CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France;2. STMicroelectronics, 850 rue J. Monnet, 38920 Crolles, France;1. Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea;2. Department of Physics, College of Science and Technology, Andhra University, Visakhapatanam, Andhra Pradesh 53003, India |
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| Abstract: | For the achievement of microactuators based on piezoelectric thin films, a Pt/Ti/Si bottom electrode is widely used. This study presents the experimental results for Ti out-diffusion in Pt and Si for both sputtered Pt/Ti and Pt/TiOx electrodes. These results have been compared before and after a rapid thermal annealing (RTA). The diffusion has been characterized by secondary ion mass spectroscopy (SIMS) analysis using Cs+ as a primary ion source. The Pt orientation has been observed by XRD measurements. Ti thin films (20 nm) have been sputtered in pure Ar whereas TiOx films have been obtained by reactive sputtering in a mixture of Ar/O2 (90/10). Finally, the Pt (100 nm) has been sputtered without vacuum breaking. After RTA (400°C, 30 s, in N2), the Pt film exhibited a (1 1 1) orientation for both Ti and TiOx adhesion films. The roughness of the Pt film measured by AFM with TiOx underlayer was 80% less than that of the Pt/Ti bi-layer. The TiOx film, as shown by SIMS analysis, has drastically reduced the diffusion of Ti in both Pt and Si. This phenomenon is accompanied by a very low Pt roughness. These results are analyzed in terms of diffusion and regrowth mechanisms inside the Pt film. |
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