Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime |
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| Affiliation: | 1. P.O. Box 5800, MS 1411, Sandia National Laboratories, Albuquerque, NM 87185, USA;2. Theoretical Division, MS B262, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;3. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA;4. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA;1. Univ. Lyon, INSA de Lyon, CNRS UMR 5208, Institut Camille Jordan, 20 avenue Albert Einstein, F-69621 Villeurbanne Cedex, France;2. Univ. Lyon, Institut de Nanotechnologie de Lyon, CNRS UMR 5270, Ecole Centrale de Lyon, 36 Av. Guy de Collongue, F-69134 Ecully, France;3. Univ. Lyon, Université Claude Bernard Lyon 1, CNRS UMR 5208, Institut Camille Jordan, 43 blvd. du 11 novembre 1918, F-69622 Villeurbanne cedex, France;1. Department of Materials Engineering, Indian Institute of Science, 560012 Bangalore, India;2. Institute of Applied Materials, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;1. Materials & Process Simulation, University of Bayreuth, Germany;2. Department of Materials Science & Engineering, Ohio State University, USA |
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| Abstract: | The microstructural evolution and kinetics of Ostwald ripening were studied in the high volume fraction regime by numerically solving the time-dependent Ginzburg–Landau (TDGL) and Cahn–Hilliard equations. It is shown that the growth exponent m is equal to 3, independent of the volume fraction, and the kinetic coefficient k increases as the volume fraction increases. The shape of size distributions changes significantly with increasing volume fraction of the coarsening phase; the skewness changes continuously from negative to positive while the kurtosis decreases in the low fraction regime and increases in the high volume fraction regime. |
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