Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing |
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Affiliation: | 1. Dipartimento di Informatica, Università degli Studi di Torino, Torino, Italy;2. College of Information Technology, University of the Punjab, Lahore, Pakistan |
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Abstract: | 2000 Å-SiO2/Si(1 0 0) and 560 Å-Si3N4/Si(1 0 0) wafers, that are 10 cm in diameter, were directly bonded using a rapid thermal annealing method, so-called fast linear annealing (FLA), in which two wafers scanned with a high-power halogen lamp. It was demonstrated that at lamp power of 550 W, corresponding to the surface temperature of ∼450°C, the measured bonded area was close to 100%. At the same lamp power, the bond strength of the SiO2∥Si3N4 wafer pair reached 2500 mJ/m2, which was attained only above 1000°C with conventional furnace annealing for 2 h. The results clearly show that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4 films (Si/SiO2∥Si3N4/Si) compared to the conventional method. |
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