Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures |
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| Affiliation: | 1. Semiconductor and Microsystems Technology Laboratory, University of Technology, Dresden, Germany;2. Fraunhofer Institute for Ceramic Technologies and Sintered Materials, Dresden, Germany;1. IEMN–DOAE–MIMM, UMR CNRS 8520, Université de Valenciennes et du Hainaut–Cambrésis, Le mont houy, 59313 Valenciennes Cedex 9, France;2. SIFCOM-ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France;3. Laboratoire de Cristallochimie et Physico-chimie du Solide, Univ. Sciences et techniques de Lille, BP 90108, Villeneuve d’Ascq Cedex, France;4. Ecole Centrale Paris, Laboratoire Structures Propriétés et Modélisation (SPMS)–CNRS UMR 8580, Grande voie des vignes, 92295 Châtenay Malabry, France;1. Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Republic of Korea;2. Information Display Research Institute, Hanyang University, Seoul, 133-791, Republic of Korea;1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;2. AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany;1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore;2. Institute of Material Research & Engineering, A⁎STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore;3. Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, 637616, Singapore;1. Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA;2. Department of Chemistry, University of Florida, Gainesville, FL 32611, USA;3. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA |
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| Abstract: | The high-k dielectric material (Ba,Sr)TiO3 has been intensively investigated for possible applications in dynamic random access memory circuits. During the BST deposition process in O2 ambient, typically at 650°C, the diffusion of oxygen through the bottom electrode into the poly Si plug must be prevented. Amorphous TaSiN films are excellent candidates as oxygen barrier layers. Ba0.5Sr0.5TiO3 (BST) films with thickness of 100 nm were deposited on the electrode structure SiO2/TaSiN/Pt. The sol–gel method was used to grow the BST films. The barrier effect for oxygen diffusion is studied in TaSiN layers with thickness of 50 nm, which were deposited by a reactive sputter process. X-ray photoemission spectroscopy results confirm that this amorphous material is a suitable barrier against oxygen diffusion at 650°C. The BST films, deposited at 650°C and post-annealed at 650°C show a dielectric constant of 100 at 100 kHz and a dissipation factor of less than 5%. |
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