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Effects of alloying elements on creep of TiAl alloys with a fine lamellar structure
Affiliation:1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, PR China;2. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;1. Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Roseggerstr. 12, 8700 Leoben, Austria;2. Erich Schmid Institute of Materials Sciences, Austrian Academy of Sciences, Jahnstr. 12, 8700 Leoben, Austria;1. Gamteck, Beavercreek, OH 45431, USA;2. UES, Dayton, OH 45432, USA;1. School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China;2. Beijing Key Laboratory of Aeronautical Materials Testing and Evaluation, Science and Technology on Advanced High Temperature Structural Materials Laboratory, AVIC Beijing Institute of Aeronautical Materials, Beijing 100095, China
Abstract:Creep experiments were conducted on five powder-metallurgy TiAl alloys with fine grains (65–80 μm), fine lamellar spacings (0.1–0.16 μm), and different compositions Ti–47Al (+Cr, Nb, Ta, W, Si)] at temperatures of 760°C and 815°C and stresses from 35 to 723 MPa. Results show that at a given lamellar spacing, replacing 1% Nb (atomic percent) with 1% Ta and replacing 0.2% Ta with 0.2% W induced little effect, but addition of 0.3% Si decreased the creep resistance by a factor of 3–4 under otherwise identical conditions. Field emission TEM was used to characterize the changes of microstructure and alloy element distribution before and after creep. It was found that thinning and dissolution of α2 lamellae and continuous coarsening of γ lamellae were the main creep processes and the microalloying elements tended to segregate at lamellar interfaces, especially at ledges during creep. The effects of different alloying elements are interpreted in terms of the interaction of alloy segregants with misfit and/or misorientation dislocations at the lamellar interface. That is, the interaction retards the climb of interfacial dislocations and thus the creep process in the case of large segregants (Nb, Ta, W), but facilitates the climb and creep in the case of small segregants (Si).
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