| 深亚微米光学光刻设备制造技术 |
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| 引用本文： | 谢常青.深亚微米光学光刻设备制造技术[J].电子工业专用设备,2000,29(2):15-19. |
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| 作者姓名： | 谢常青 |
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| 作者单位： | 中国科学院微电子中心三室,北京,100010 |
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| 摘 要： | 相对于其它“后光学”光刻技术 ,在 0 1 3μm甚至 0 1 3μm以下集成电路制造水平上 ,光学光刻仍然具有强大的吸引力。随着光学光刻极限分辨率的不断提高 ,当代光学光刻设备正面临着越来越严重的挑战。论述了深亚微米光学光刻设备的技术指标和面临的技术困难 ,对其中一些关键的技术解决方案进行了分析。
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| 关 键 词： | 193nm光学光刻 157nm光学光刻 透镜 步进扫描 |
| 文章编号： | 1004-4507(2000)02-0015-05 |
| 修稿时间： | 2000-06-08 |
The Fabrication Technology for Deep-Sub-Micron Optical Lithography Tool |
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| XIE Chang-qing.The Fabrication Technology for Deep-Sub-Micron Optical Lithography Tool[J].Equipment for Electronic Products Marufacturing,2000,29(2):15-19. |
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| Authors: | XIE Chang-qing |
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| Affiliation: | XIE Chang-qing
(The 3rd lab of Microelectronics R&D Center,Chinese Academy of Sciences, Beijing 100010, China) |
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| Abstract: | Compared to other “post?optical”lithography technology,Optical lithography will be still very fruitful for 0 13μm integrated circuits manufacturing and below.With the continuous improvement of optical lithography limit resolution,the current lithography tool is facing with more and more serious challenge.In this paper,the technology guideling and the technology difficulty for the deep?sub?micron lithography exposure equipment are discussed,and some pivotal technology resolving projects are also analysed briefly. |
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| Keywords: | nm optical lithography 157nm optical lithography Lens Step?and?scan |
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