| ULSI电路层间SiO_2介质CMP工艺与抛光液 |
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| 引用本文： | 孙鸣,刘玉岭,贾英茜,刘博,刘长宇.ULSI电路层间SiO_2介质CMP工艺与抛光液[J].微纳电子技术,2006,43(11):549-552. |
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| 作者姓名： | 孙鸣 刘玉岭 贾英茜 刘博 刘长宇 |
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| 作者单位： | 河北工业大学,微电子所,天津,300130 |
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| 摘 要： | 阐明了化学机械抛光(CMP)工艺在集成电路制造中所发挥的关键作用,介绍了作为IC多层布线层间介质SiO2的化学机械抛光机理及其抛光液在化学机械抛光中扮演的重要角色,着重分析了影响SiO2介质化学机械抛光质量的主要因素并在此基础上提出CMP工艺的优化工艺条件以及今后SiO2介质CMP研究重点。
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| 关 键 词： | 化学机械抛光 SiO2介质 去除速率 |
| 文章编号： | 1671-4776(2006)11-0549-04 |
| 收稿时间： | 2006-05-23 |
| 修稿时间： | 2006年5月23日 |
Processes and Slurries in ULSI SiO2-ILD CMP |
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| SUN Ming,LIU Yu-ling,JIA Ying-qian,LIU Bo,LIU Chang-yu.Processes and Slurries in ULSI SiO2-ILD CMP[J].Micronanoelectronic Technology,2006,43(11):549-552. |
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| Authors: | SUN Ming LIU Yu-ling JIA Ying-qian LIU Bo LIU Chang-yu |
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| Abstract: | It was demonstrated that the critical role of chemical mechanical planarization(CMP)played in the IC fabrication.Furthermore,described the CMP process fundamentals of interlevel dielectric(ILD)-silicon dioxide with IC multi,level connection in details and the effects of CMP slurry as well.Finally,stressed and analysed the factors mainly effecting silicon dioxide CMP quality and on the basis of analysed factors of above,put forward optimal process design and keystones of CMP process for the future. |
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| Keywords: | CMP SiO2 dielectric removal rate |
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