| 薄膜SOI结构中反型层厚度与薄膜厚度的关系 |
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| 引用本文： | 夏永伟,王守武. 薄膜SOI结构中反型层厚度与薄膜厚度的关系[J]. 半导体学报, 1990, 11(12): 962-965 |
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| 作者姓名： | 夏永伟 王守武 |
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| 作者单位： | 中国科学院半导体研究所 北京(夏永伟)，中国科学院半导体研究所 北京(王守武) |
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| 摘 要： | 本文从理论上分析了薄膜SOI结构中反型层厚度与薄膜厚度的关系。为设计薄膜MOS/SOI器件引进了一个新的参数──薄膜整体反型临界厚度。分析认为,为使超薄膜MOS/SOI器件高速和高功率工作,有必要使薄膜厚度接近整体强反型临界厚度。
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| 关 键 词： | 薄膜 SOI 反型层厚度 薄膜厚度 |
Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures |
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| Xia Yongwei/Institute of Semiconductors,Academia Sinica,P.O. Box ,,Beijing,ChinaWang Shouwu/Institute of Semiconductors,Academia Sinica,P.O. Box ,,Beijing,China. Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures[J]. Chinese Journal of Semiconductors, 1990, 11(12): 962-965 |
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| Authors: | Xia Yongwei/Institute of Semiconductors Academia Sinica P.O. Box Beijing ChinaWang Shouwu/Institute of Semiconductors Academia Sinica P.O. Box Beijing China |
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| Affiliation: | Xia Yongwei/Institute of Semiconductors,Academia Sinica,P.O. Box 912,100083,Beijing,ChinaWang Shouwu/Institute of Semiconductors,Academia Sinica,P.O. Box 912,100083,Beijing,China |
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| Abstract: | The dependence of inversion layer thickness on film thickness in thin-film SOI structureis analysed theoretically by using computer simulation. A new concept and parameter, the criticalthickness of thin film all-bulk inversion, are introduced for the design of thin-film MOS)SOI devices. It is necessary to select the film thickness near to the all-bulk strong inversion criticalthicknesss in order to get high speed and high power working of ultrathin film MOS/SOIdevices. |
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| Keywords: | Semiconductor device and Material MOS structure Field-effect transistors design |
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