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Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films |
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| Authors: | Yasushi Sobajima Kunihiro Mori Masahiro Tsukamoto Norimitsu Yoshida Masao Takahashi Hikaru Kobayashi Shuichi Nonomura |
| Affiliation: | a Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1–1 Yanagido, Gifu 501–1193, Japan;b Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567–0047, Japan |
| Abstract: | Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated. |
| Keywords: | Amorphous silicon Photoinduced dilation Cyanide treatment |
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