| 宽温区MOSFET反型层载流子迁移率的模型和测定方法 |
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| 引用本文： | 冯耀兰,宋安飞,张海鹏,樊路加. 宽温区MOSFET反型层载流子迁移率的模型和测定方法[J]. 固体电子学研究与进展, 2001, 21(4): 448-452 |
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| 作者姓名： | 冯耀兰 宋安飞 张海鹏 樊路加 |
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| 作者单位： | 东南大学微电子中心, |
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| 基金项目： | 国家自然科学基金重点项目 (批准号 :6 9736 0 2 0 ) |
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| 摘 要： | 首先介绍了宽温区 (2 7～ 30 0°C) MOSFET的阈值电压、泄漏电流和漏源电流的特点以及载流子迁移率的高温模型 ;进而给出了室温下 MOSFET反型层载流子迁移率的测定方法 ,最后提出了利用线性区 I- V特性方程测定宽温区 MOSFET反型层载流子迁移率的方法 ,并给出了测试结果
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| 关 键 词： | 宽温区 金属-氧化物-半导体场效应晶体管 反型层 载流子迁移率 |
| 文章编号： | 1000-3819(2001)04-448-05 |
| 修稿时间： | 1999-12-28 |
The Model and Measurement Method of Inversion Layer Carrier Mobility of MOSFET in the Wide Temperature Range |
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| FENG Yaolan SONG Anfei ZHANG Haipeng FAN Lujia. The Model and Measurement Method of Inversion Layer Carrier Mobility of MOSFET in the Wide Temperature Range[J]. Research & Progress of Solid State Electronics, 2001, 21(4): 448-452 |
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| Authors: | FENG Yaolan SONG Anfei ZHANG Haipeng FAN Lujia |
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| Abstract: | In this paper, the characteristics of MOSFET threshold voltage、leakage current and drain source current in the wide temperature range from 27°C to 300°C are studied, afterwards the high temperature model of carrier mobility is studied too. The method of measuring the inversion layer carrier mobility of MOSFET at room temperature is given. Then the method of measuring the inversion layer carrier mobility in the wide temperature range, utilizing the I V characteristic equation in range of linearity, is explored and the measuring result is provided. |
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| Keywords: | wide temperature range MOSFET inversion layer carrier mobility |
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