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Carrier removal after H1+, H2+ or H3+ implants into GaAs |
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| Authors: | Gecim H.C. Sealy B.J. Stephens K.G. |
| Affiliation: | University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK; |
| Abstract: | It is demonstrated that the carrier removal caused by implanting equivalent doses of H1+ H2+ and H3+ ions into GaAs is identical and approximately independent of the ion energy in the range 300?500 keV. Some recovery of carriers removed occurs at about 250°C. |
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