| Abstract: | Epitaxial CoSi2 (001) layers, deposited on Si (001) substrate by molecular beam allotaxy (MBA), were used as substrate for diamond deposition in order to realise new applications. The results indicate that, in a microwave plasma chamber, diamond can be nucleated with a higher density on CoSi2 at lower temperatures using a bias enhanced method. High quality, 001]-textured diamond films can be synthesized on CoSi2 (001) using the 001] textured growth conditions. So far an epitaxial growth of diamond on CoSi2 cannot be observed. Statistically, a rotating angle distribution of diamond grains around the 001] axis in an 001]-textured film shows, however, preferred in-plane orientations of 13°, 22°, 45° and 77° relative to the CoSi2 011]axis. The structural and chemical analyses show that no Co and Si element diffusion from the CoSi2 substrate into the diamond film can be detected. |
