MEMS硅铝异质结构压力传感器的设计制作与测试研究

金属半导体异质混合结构是一种特殊的压阻结构,其具有高于传统MEMS压阻式压力传感器的压阻性能.鉴于此,设计和研究了一种由掺杂单晶硅和金属铝混合形成的MEMS异质结构压力传感器.首先结合理论模型和ANSYS有限元模拟仿真分析了硅铝异质结构传感器的灵敏度特性,然后通过MEMS工艺制作了硅铝异质结构压力传感器芯片,并对其进行了封装与测试.实验结果表明,硅铝异质结构压力传感器的灵敏度可达到0.1168 mV/(V·kPa),而利用参考结构能够明显减小环境温度对其性能的影响.在此基础之上,本文采用基于遗传算法改进的小波神经网络对传感器的温度漂移和非线性误差进行了补偿,补偿后硅铝异质结构压力传感器的测量误差小于±1.5％FS.

Design, Fabrication and Testing of MEMS Silicon-Aluminum Hybrid Structure Pressure Sensor

The metal-semiconductor hybrid structure is a special piezoresistive structure which has a higher piezoresistive effect than conventional MEMS piezoresistive pressure sensor. In view of this, a MEMS pressure sensor with the silicon-aluminum hybrid structure was designed and studied in this paper. First of all, the sensitivity characteristic of the silicon-aluminum hybrid structure pressure sensor was analyzed by theoretical model and ANSYS finite element simulation. Then this sensor chip was fabricated by the MEMS technology, and the sensor was packaged and tested. Experimental results show that the sensitivity of the sensor can reach 0.1168 mV/(V?kPa) and the reference structure can significantly reduce the influence of ambient temperature on its performance. On this basis, this paper applies the improved wavelet neural network based on genetic algorithm to compensate the temperature drift and nonlinear error of the sensor. The measured error of the compensated silicon-aluminum hybrid structure pressure sensor is less than ± 1.5% FS.