5.2-GHz bandwidth monolithic GaAs optoelectronic receiver |
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| Authors: | Harder C.S. Van Zeghbroeck B. Meier H. Patrick W. Vettiger P. |
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| Affiliation: | IBM, Ruschlikon; |
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| Abstract: | A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50-Ω output buffer stage has been fabricated using an enhancement/depletion 0.35-μm recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Ω into a 50-Ω load, which corresponds to a transimpedance bandwidth product of 1.5 THz-Ω |
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