纳米BaTiO3-SiCw/聚偏氟乙烯三元复合薄膜的制备及其介电性能

以15wt%十六烷基三甲基溴化铵改性碳化硅晶须(CTAB-SiC_w)和KH550改性纳米BaTiO₃(BT)为填料，聚偏氟乙烯(PVDF)为成膜物质，通过溶液流延法制备了BT-SiC_w/PVDF三元复合薄膜，利用FTIR、XRD、SEM和LCR介电温谱仪-高温测试系统联用装置对产物进行结构表征和介电性能测试。结果表明:KH550可以成功改性BT粒子且不会改变BT晶体结构，SiC_w和BT能够较好地分散在PVDF基体中；随着BT引入量的增加，复合薄膜的介电常数先增加后减小，其中当引入10wt%BT时介电性能最优，即频率f=500 Hz、介电常数ε_rmax=33、介电损耗tanδ_max=0.154。随着温度的升高，该试样的介电常数和介电损耗也逐渐增加，并在120℃达到最大值(f=500 Hz、ε_rmax=110、tanδ_max=1.3)。结果对于研究具有高介电常数的三元复合电介质材料为在埋入式电容器中获得应用提供了一种策略。 

Preparation and dielectric properties of nano BaTiO3-SiCw/poly(vinylidene fluoride) ternary composite films

With poly(vinylidene fluoride) (PVDF) as matrix, 15wt% of CTAB modified silicon carbide nanowhisker (SiC_w) and nano BaTiO₃ (BT) particles modified by KH550 as fillers, the BT-SiC_w/PVDF ternary composite film was prepared. The composition and the micro-morphology of the samples were investigated by FTIR, XRD and SEM, respectively. It was illustrated that modified BT could be well dispersed in PVDF matrix by SEM analysis. The results show that KH550 particles can be successfully modified BT and BT does not change the crystal structure, SiC_w and BT can be well dispersed in the PVDF matrix. The dielectric constant of the BT-SiC_w/PVDF composite film is as high as 33 while the dielectric loss is only 0.154 correspondingly at the frequency of 500 Hz with loading of 10wt% BT at room temperature and reach optimal. The dielectric constant and dielectric loss of the composite film increase with increasing the temperature and reach the maximum value (freqyency f=500 Hz, dielectric constant ε_rmax=110, dielectric loss tanδ_max=1.3) at 120℃, which provide a strategy to find application in the buried capacitor that the results for research ternary ceramic material having a high dielectric constant dielectric material.