The prospects of non-volatile phase-change RAM |
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Authors: | Kinam Kim Gitae Jeong |
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Affiliation: | (1) Advanced Technology Development Team, Memory Division, Samsung Electronics Co. Ltd, San#24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, 449-711, South Korea |
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Abstract: | Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed. |
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