Control of conduction band offset in wide-gap Cu(In,Ga)Se2 solar cells |
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| Authors: | Takashi Minemoto Yasuhiro Hashimoto Wahid Shams-Kolahi Takuya Satoh Takayuki Negami Hideyuki Takakura Yoshihiro Hamakawa |
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| Affiliation: | a Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan;b Living Environment Development Center, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika-Cho, Soraku-gun, Kyoto 612-0237, Japan |
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| Abstract: | The effects of conduction band offset of window/Cu(In,Ga)Se2 (CIGS) layers in wide-gap CIGS based solar cells are investigated. In order to control the conduction band offset, a Zn1−xMgxO film was utilized as the window layer. We fabricated CIGS solar cells consisting of an ITO/Zn1−xMgxO/CdS/CIGS/Mo/glass structure with various CIGS band gaps (Eg≈0.97–1.43 eV). The solar cells with CIGS band gaps wider than 1.15 eV showed higher open circuit voltages and fill factors than those of conventional ZnO/CdS/CIGS solar cells. The improvement is attributed to the reduction of the CdS/CIGS interface recombination, and it is also supported by the theoretical analysis using device simulation. |
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| Keywords: | Cu(In Ga)Se2 Zn1− xMgxO Window layer Conduction band offset |
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