| 未掺杂半绝缘LECGaAs费米能级和EL2电离率温度关系 |
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| 引用本文： | 贾晓华 杨瑞霞. 未掺杂半绝缘LECGaAs费米能级和EL2电离率温度关系[J]. 河北工业大学学报, 1999, 28(5): 59-63 |
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| 作者姓名： | 贾晓华 杨瑞霞 |
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| 作者单位： | [1]天津市红桥区职工大学 [2]河北工业大学 |
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| 摘 要： | 在２８４￣４５５Ｋ温度范围内，对未掺杂半绝缘ＬＥＣＧａＡｓ样品进行了霍尔－范德堡测量。根据实验数据计算了费米能级和深施主缺陷ＥＬ２电离率的温度关系。发现计算结果与标准ＬＥＣＳＩＧａＡｓ样品有明显差别。这种差别可能是由于样品中存在杂质和缺陷不均匀分布引起的长程势波动。
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| 关 键 词： | EL2 费米能级 砷化镓 半绝缘 缺陷 电离率 温度 |
Temperature Dependence of the Fermi Level and the EL2 Ionized Fraction in Undoped LECSIGaAs |
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| Jia Xiaohua, Yang Ruixia, Yu Haixia, Zhang Fuqiang. Temperature Dependence of the Fermi Level and the EL2 Ionized Fraction in Undoped LECSIGaAs[J]. Journal of Hebei University of Technology, 1999, 28(5): 59-63 |
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| Authors: | Jia Xiaohua Yang Ruixia Yu Haixia Zhang Fuqiang |
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| Affiliation: | Jia Xiaohua; Yang Ruixia; Yu Haixia; Zhang Fuqiang |
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| Abstract: | Hall-van der Pauw measurements have been carried oUt for undoped LECSIGaAs samples over the 284K~455K range. The temperature dependence of the Fermi level and the EL2 ionized fraction for these samples have been calculated from the measured data. The experimental results show a considerable deplore from the situation eXPected for standard undopedLECSIGaAs CryStals. It is likely that this departure originates from the long-range potelltial fluctuations due to the inhomogeneous distriblltions of defects and impurities. |
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| Keywords: | :GaAs Hall measurement EL2 Fermi level |
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