| Abstract: | Thermally stimulated discharge current and the potential decay behavior of amorphous selenium (a‐Se) films (～ 100 μm thick) were studied as a function of the thickness of a poly(vinylidene fluoride) (PVDF) interface barrier layer in the range 2000–8000 Å. The incorporation of a PVDF layer into an a‐Se film resulted in (1) a considerable reduction in its charge storage capacity, (2) a considerable increase in its initial surface potential, and (3) a considerable reduction in its residual potential and the enhancement of its X‐ray sensitivity. These effects were attributed to the blocking and field‐enhanced mobility role of the PVDF interface barrier layer. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 91: 1962–1966, 2004 |
