Optically frequency modulated GaAs MESFET oscillator |
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| Authors: | Loriou B Guena J Sautereau JF |
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| Affiliation: | Centre National d'Etudes des Télécommunications, Lannion, France; |
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| Abstract: | A GaAs MESFET X-band oscillator has been frequency modulated by an amplitude modulated optical signal injected on the active device. A modulation index of 0.5 corresponding to MSK modulation has been achieved at 2 Mbit/s without parasitic amplitude modulation. It is shown that the FM modulation index variation against frequency is directly related to the drain current response of the FET considered as a photodetector. This responsivity has been measured to decrease above 5 MHz, which limits the oscillator FM capability. |
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