| 高压IGBT制造技术的最新动向 |
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| 引用本文： | 张昌利,陈治明. 高压IGBT制造技术的最新动向[J]. 微纳电子技术, 1997, 0(5) |
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| 作者姓名： | 张昌利 陈治明 |
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| 作者单位： | 西安电力电子技术研究所(张昌利)，西安理工大学(陈治明) |
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| 摘 要： | 阐述了当前２．５～４．５ｋＶ高压ＩＧＢＴ的最新制造技术和典型器件结构，认为高压大电流ＩＧＢＴ器件的开发成功将为未来电力电子技术的发展提供新的机遇和挑战。
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| 关 键 词： | 电力电子技术 绝缘栅双极型晶体管 高压 |
Recent Tendency of High Voltage IGBTs Manufacture |
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| Zhang Changli. Recent Tendency of High Voltage IGBTs Manufacture[J]. Micronanoelectronic Technology, 1997, 0(5) |
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| Authors: | Zhang Changli |
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| Abstract: | The manufacture and device structure with 2 5～4 5kV high voltage IGBTs were reviewed in this paper.It has considered that the development of power IGBT would bring opportunity and challenge to the development of power electronics in the near future. |
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| Keywords: | Power electronics IGBT High voltage |
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