Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films |
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| Authors: | Yu-Jen HuangMin-Chuan Tsai Chiung-Hsin WangTsung-Eong Hsieh |
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| Affiliation: | Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 30010, Taiwan, ROC |
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| Abstract: | Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 °C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. |
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| Keywords: | Phase-change memory Germanium antimony telluride Cerium Doping Electrical properties |
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