| Si基微波单片集成电路的发展 |
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| 引用本文： | 杨建军,刘英坤. Si基微波单片集成电路的发展[J]. 半导体技术, 2010, 35(3): 205-208,281. DOI: 10.3969/j.issn.1003-353x.2010.03.002 |
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| 作者姓名： | 杨建军 刘英坤 |
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| 作者单位： | 河北工业大学信息工程学院,天津,300130;河北工业大学信息工程学院,天津,300130;中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 随着半导体制造技术和材料技术的进步,Si基微波单片集成电路逐渐向高频、高线性、低噪声、低成本方向发展。介绍了近年国内外在Si基微波单片集成电路在制造工艺、电路结构和制作材料上的革新,阐述了三维Si微波单片集成电路技术、隔离槽技术、Si高阻衬底技术、SiGe技术等对Si基微波单片集成电路发展的影响,并列举了一些典型的应用。最后展望了Si基微波单片集成电路的发展前景。
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| 关 键 词： | 硅基微波单片集成电路 三维 隔离槽 硅高阻硅衬底 锗硅 |
Development of Silicon Based MMIC |
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| Yang Jianjun,Liu Yingkun. Development of Silicon Based MMIC[J]. Semiconductor Technology, 2010, 35(3): 205-208,281. DOI: 10.3969/j.issn.1003-353x.2010.03.002 |
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| Authors: | Yang Jianjun Liu Yingkun |
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| Affiliation: | 1.School of Information Engineering;Hebei University of Technology;Tianjin 300130;China;2.The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | With the development of semiconductor manufacture and material technology,Si based microwave monolithic integrated circuit(MMIC)turn to high frequency,high linearity,low noise and low cost application.The recent years international development of manufacture,circuit configuration and material technology of Si based MMIC are introduced.Deep trench isolation,Si high resistivity substrate and SiGe technology of Si based MMIC are described,and some typical applications are introduced.Finally,the future prospect... |
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| Keywords: | Si based MMIC 3D deep trench isolation Si high resistivity substrate SiGe |
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