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High-Resolution Electron Microscopy Observations of Stacking Faults in β-SiC
Authors:Kunihito Koumoto  Shunji Takeda  Chul Hoon Pai  Takayori Sato  Hiroaki Yanagida
Affiliation:Department of Industrial Chemistry, Faculty of Engineering, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;Department of Industrial Chemistry, Chiba Institute of Technology, Tsudanuma, Narashino-shi, Chiba 275, Japan;Research Center for Advanced Science and Technology, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153, Japan
Abstract:Structural images of the stacking faults in β-SiC were obtained with a high-resolution electron microscope. Stacking faults initially present in β-SiC powder particles were eliminated as grain growth proceeded at elevated temperatures.
Keywords:silicon carbide    grain growth    electron microscopy    crystallography    microscopy
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