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添加玻璃料对BaSm_2Ti_4O_(12)微波介质陶瓷烧结行为和介电性能的影响
引用本文:刘维良,刘硕琦,马奔,唐春宝.添加玻璃料对BaSm_2Ti_4O_(12)微波介质陶瓷烧结行为和介电性能的影响[J].稀有金属材料与工程,2009,38(Z2).
作者姓名:刘维良  刘硕琦  马奔  唐春宝
作者单位:1. 景德镇陶瓷学院,江西,景德镇,333001
2. 北京科技大学,北京,100083
基金项目:江西省教育厅科研基金资助 
摘    要:利用固相法制备BaSm_2Ti_4O_(12)(BST)微波介质陶瓷.研究了复合添加Li_2CO_3-B_2O_3-SiO_2-CaO-Al_2O_3(LBSCA)和BaO-B_2O_3-SiO_2(BBS) 玻璃料对BaSm_2Ti_4O_(12)微波介质陶瓷的烧结性能、介电性能、相组成和微观结构的影响.研究表明:复合掺杂10% LBSCA和2%~5% BBS可使烧结温度降至900 ℃.XRD分析表明复合掺杂两种玻璃料的BST陶瓷主晶相为BaSm_2Ti_4O_(12)相,玻璃料以玻璃相的形式存在陶瓷晶粒间.复合掺杂10% LBSCA+3%BBS玻璃料的BST陶瓷可在900 ℃、保温2 h条件下烧结致密,微波介电性能为:ε_r =55.63,Q_f = 4266 GHz,τ_f= -13.5×10~(-6)℃~(-1),这种陶瓷材料有望与纯Ag电极共烧,制作各种多层微波频率元器件.

关 键 词:微波介质陶瓷  BaO-Sm_2O_3-TiO_2系统  低温烧结  介电性能

Influence of Glass Doping on Sintering Characteristic and Dielectric Properties of BaO-Sm_2O_3-TiO_2 System Microwave Dielectric Ceramics
Liu Weilang,Liu Shuoqi,Ma Ben,Tang Chunbao.Influence of Glass Doping on Sintering Characteristic and Dielectric Properties of BaO-Sm_2O_3-TiO_2 System Microwave Dielectric Ceramics[J].Rare Metal Materials and Engineering,2009,38(Z2).
Authors:Liu Weilang  Liu Shuoqi  Ma Ben  Tang Chunbao
Affiliation:Liu Weilang1,Liu Shuoqi2,Ma Ben2,Tang Chunbao1 (1. Jingdezhen Ceramic Institute,Jingdezhen 333001,China) (2. University of Science & Technology Beijing,Beijing 100083,China)
Abstract:BaO-Sm_2O_3-TiO_2 microwave dielectric ceramics were prepared by traditional solid sate reaction technique. The effects of sintering aid Li_2CO_3-B_2O_3-SiO_2-CaO-Al_2O_3(LBSCA ) and BaO-B_2O_3-SiO_2(BBS) on sintering characteristic, dielectric properties, phases and microstructure of BaO-Sm_2O_3-TiO_2 microwave dielectric ceramic ware studied. The sintering temperature was decreased to 900 ℃ by doping 10% LBSCA and 2~5% BBS. The results indicate that the major phase of additives-doped ceramics is BaSm_2Ti_4O_(12) phase by XRD analysis and the additives exist in between the crystal in the form of glass phases. The ceramic of BaSm_2Ti_4O_(12)+10% LBSCA + 3%BZS sintered at 900 ℃ for 2 h has the following microwave characteristics: ε_r = 55.63, Q_f = 4266 GHz, τ_f = -13.5×10~(-6) ℃~(-1). The ceramic is promised sintered with Ag electrode and be used to prepare various multilayer microwave components and devices.
Keywords:microwave dielectric ceramics  BaO-Sm_2O_3-TiO_2 system  low temperature sintering  dielectric properties
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