Modification of modal gain in InGaAs-GaAs quantum-well lasers dueto barrier-state carriers |
| |
Authors: | Finzi D Mikhaelashvili V Tessler N Eisenstein G |
| |
Affiliation: | Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa; |
| |
Abstract: | This paper describes the effects of barrier-state carriers on the modal gain of InGaAs-GaAs quantum-well (QW) lasers emitting at 980 nm. Experimental studies and numerical simulations are used to examine several drive configurations, each having a unique effect on the laser response. These include compound drive current shapes, optical excitations and fast electrical drives with rise times shorter than 100 ps. We demonstrate that a large barrier-state carrier density affects the index of refraction sufficiently so as to cause a reduction in the confinement factor and modal gain which is large enough to turn the laser off |
| |
Keywords: | |
|
|