Effect of hydrogen loading on temperature/electric-field poling ofSiO2-based thin films on Si |
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Authors: | Myers R.A. Long X.-C. Brueck S.R.J. Tumminelli R.P. |
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Affiliation: | Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM; |
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Abstract: | Waveguide stacks of GeSiO2-based glass deposited on Si exhibit a permanent second-order nonlinearity following temperature electric-field poling. High temperature hydrogen loading increases the second harmonic signal under certain conditions |
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