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Effect of hydrogen loading on temperature/electric-field poling ofSiO2-based thin films on Si
Authors:Myers   R.A. Long   X.-C. Brueck   S.R.J. Tumminelli   R.P.
Affiliation:Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM;
Abstract:Waveguide stacks of GeSiO2-based glass deposited on Si exhibit a permanent second-order nonlinearity following temperature electric-field poling. High temperature hydrogen loading increases the second harmonic signal under certain conditions
Keywords:
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