InGaAs/InP微波双极型晶体管的研制

本文叙述双收集区NpnN型InGaAs/InP异质结双极型晶体管的实验结果.给出器件的击穿特性、开关特性.高频特性和温度特性.理论分析和实验结果表明,n型InGaAs第一收集区的厚度对晶体管的击穿特性和开关特性有重要影响.器件的击穿电压BV_(CE0)=20伏,贮存时间t_s=0.5ns(Ic=50mA,I_(B1)=10mA,回抽电流I_(B2)=0),f_T=1.2GHz(V_(CE)=6V,Ic=15mA).在77～433K范围内h_(fe)变化很小,在4K下h_(fe)≌1,并表现出强烈的俄立(Early)效应.

Evaluation of an InGaAs/lnP Microwave Bipolar Transistor

The experimental results including breakdown voltage, switching behavior, high frequency and temperature performances of an NpnN InGaAs/InP heterojunction bipolar transistor with a double collector layer structure are presented. Theoretical analysis and experimental results show that the n-InGaAs C1 layer has a great influence on the breakdown voltage and switching behavior of the transistor. An emitter-collector breakdown voltage BVcEo=20V and a storage time ts = 0.5ns(Ic=50mA,IB1 =10mA,IB2=0 have been obtained. Current gain versus temperature curve shows that the current gain hfe remains almost constant over a temperature range of 77-433 K (160℃), and drops to nuity, showing a strong Early effect at 4K. The cutoff frequency, limited mainly by large emitter and collector junction capacitances, fT=1.2GHz (VcE=6V, Ic=15mA) is obtained.