InP/Al2O3n-channel inversion-mode m.i.s.f.e.t.s using sulphur-diffused source and drain |
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| Authors: | Kawakami Tsuyoshi Okamura Masamichi |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | InP metal-insulator-semiconductor field-effect transistors (m.i.s.f.e.t.s) have been fabricated using c.v.d. Al2O3 as the gate insulator and the sulphur-diffusion process for source and drain. The n-channel inversion-mode device exhibits normally off behaviour. A maximum d.c. transconductance gm of 10 mS (87 mS/mm of gate width) has been obtained. |
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