Expanding the Perovskite Periodic Table to Include Chalcogenide Alloys with Tunable Band Gap Spanning 1.5–1.9 eV |
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Authors: | Ida Sadeghi Jack Van Sambeek Tigran Simonian Michael Xu Kevin Ye Tao Cai Valeria Nicolosi James M LeBeau Rafael Jaramillo |
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Affiliation: | 1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139-4307 USA;2. School of Chemistry & CRANN, Trinity College Dublin, College Green, Dublin, D02 PN40 Ireland |
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Abstract: | Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Herein, this work demonstrates epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). This work stabilizes the full range y = 0 ? 3 of compositions BaZrS(3-y)Sey in the perovskite structure. The resulting films are environmentally stable and the direct band gap (Eg) varies strongly with Se content, as predicted by theory, with Eg = 1.9 ? 1.5 eV for y = 0 ? 3. This creates possibilities for visible and near-infrared (VIS–NIR) optoelectronics, solid-state lighting, and solar cells using chalcogenide perovskites. |
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Keywords: | chalcogenide perovskites MBE semiconductors tunable bandgaps |
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