IGBT平面高压终端结构的研究

耐压是 IGBT的一个重要参数 ,所以其高压终端结构的研究一直受到人们的重视。针对常规采用的场限制保护环法和场板法高压终端结构的缺陷 ,本文提出了场板混合终端结构。此结构结合了场限制环和场板的各自优点 ,可使得击穿电压对环间距、氧化层厚度及氧化层电荷的敏感程度大大降低 ,从而简化了工艺的复杂性 ,并可获得最佳的耐压效果。本文首先对场板混合终端结构的优化设计进行了解析研究 ,提出了一套完整的设计理论 ,然后通过实验验证了此理论的正确性

Study on planar high voltage termination of IGBT

Since the breakdown voltage is a very important parameter for IGBT, people always attach importance to the research of IGBT's high voltage termination structure. According to the shortcoming of FLR(Field Limiting Ring) and FP(Field Plate), this paper presents a mixed termination structure about FLR and FP. This structure combines the merits of FLR with those of FP to decrease the sensitivity of breakdown voltage to ring spacing, oxide thickness and oxide charge. It can simplify the whole technique and can get the high breakdown voltage in the meantime. We first analytically study the optimal design of the mixed termination structure to present a complete set of design theory and then verify the theory by experiment.