High-performance second-harmonic operation W-band GaAsGunn diodes |
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| Authors: | Teng S.J.J. Goldwasser R.E. |
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| Affiliation: | Alpha Ind. Inc., St. Louis, MO; |
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| Abstract: | High output power performance and DC-to-RF conversion efficiency of second-harmonic-operation W-band (75-110 GHz) GaAs Gunn diodes is reported. Output powers of 96 and 48 mW at 94 and 103 GHz, respectively, with a DC-to-Rf conversion efficiency of 2.7 and 2.3 percent, have been achieved using single-diode GaAs Gunn oscillators. The operation of these diodes requires 2 to 4 W of DC power consumption |
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