High voltage 4H-SiC Schottky barrier diodes |
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| Authors: | Raghunathan R. Alok D. Baliga B.J. |
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| Affiliation: | Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC; |
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| Abstract: | Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm2. The specific on-resistance for these diodes was found to be low (2×10 -3 Ω-cm2 at room temperature) and showed a T 1.6 variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature |
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