高导电性BaRuO_3薄膜及其脉冲激光沉积

钌酸盐是典型的ＡＢＯ３型过渡金属氧化物，具有金属导电性，其薄膜可作为电极材料用于集成铁电等器件中。分析了ＢａＲｕＯ３的钙钛矿晶体结构和导电机制，并利用ＡｒＦ准分子脉冲激光沉积（ＰＬＤ）技术，结合后续退火处理，在Ｓｉ（１００）衬底上生长出具有（１１０）取向、室温电阻率约１０－２～１０－３Ω·ｃｍ的ＢａＲｕＯ３高导电性薄膜，俄歇能谱（ＡＥＳ）和Ｒｕｔｈｅｒｆｏｒｄ背散射谱（ＲＢＳ）分析表明：薄膜ＢａＲｕＯ３的纯度高、成分均匀性好，ＢａＲｕＯ３／Ｓｉ界面存在扩散过渡层。

Highly Electrical Conductive BaRuO_3 Thin Film and Its Preparation by Pulsed Laser Deposition

Ruthenate is a typical complex transition medal oxides of ABO3 type,whichpossesses metallic conductivity. Its film can be used as electrode material in integratedferroelectric devices,etc.In this context,the perovskitic features and conductingmechanisms in BaRuO3 crystal have been reviewed or analyzed.Perovskite BaRuO3 thinfilms of low resistivity (resistivity ranges from 10 -2 10 -3Ω.cm at room temperature)with(110)- orientation have successfully been prepared on Si(100) substrate by ArF excimer pulsed laser deposition (PLD) accompanied with subsequent annealing. Both Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) showed that the film was pure and with good compositional homogeneity while there formed an intermediate diffusion layer between BaRuO3 and Si-substrate.