| Al-C-Ni组分的变化对Al-C-Ni与ITO层接触电阻的影响 |
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| 引用本文： | 金原奭,金聖雄,崔大林,柳在一,李禹奉,李貞烈. Al-C-Ni组分的变化对Al-C-Ni与ITO层接触电阻的影响[J]. 液晶与显示, 2006, 21(5): 424-427 |
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| 作者姓名： | 金原奭 金聖雄 崔大林 柳在一 李禹奉 李貞烈 |
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| 作者单位： | 京东方科技集团股份有限公司,中央研究院,利川,467-701,韩国 |
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| 基金项目： | Supported by Key Itemof Beijing Scientific and Technical Project(No .D0304002) |
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| 摘 要： | 为克服大尺寸显示面板中反应时间的延迟问题,采用低阻栅线是十分有益的,同样在小尺寸面板上也存在这种相互匹配的过程。然而,由于Al较高的氧化速度,铝合金和ITO材料接触性能并不太好。文章介绍了在室温ITO沉积过程中,通过增加ACX(Al-C-Ni)中Ni含量来减少ACX-ITO接触电阻。经室温ITO沉积后,接触电阻成功地减少到300Ω,而且没有ACX引起的问题出现。
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| 关 键 词： | ITO Al-C-N 接触电阻 组分 |
| 文章编号： | 1007-2780(2006)05-0424-04 |
| 修稿时间： | 2006-07-19 |
Effects of Al-C-Ni Composition Changes on Contact Resistance Between Al-C-Ni and ITO Layer |
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| W S KIM,S W KIM,D L CHOI,J I RYU,W B LEE,J Y LEE. Effects of Al-C-Ni Composition Changes on Contact Resistance Between Al-C-Ni and ITO Layer[J]. Chinese Journal of Liquid Crystals and Displays, 2006, 21(5): 424-427 |
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| Authors: | W S KIM S W KIM D L CHOI J I RYU W B LEE J Y LEE |
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| Abstract: | Low resistivity of gate line is very useful for large size panel by overcoming RC delay, also, for small size application with fine pitch process. However, Al-based alloy is not easily contact to ITO metal because of high oxidation rate. This study focused to reducing ACX-ITO contact resistance by increasing nickel composition and room temperature ITO deposition process. By the room temperature ITO deposition process, contact resistance was successfully reduced about 300 Ω and no ACX originated problem was occurred. |
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| Keywords: | ITO Al-C-Ni contact resistance composition |
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