1. Institute for Microelectronics, TU Wien, Gu?hausstra?e 27–29/E360, 1040, Wien, Austria
Abstract:
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.