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Tunneling CNTFETs
Authors:Mahdi Pourfath  Hans Kosina  Siegfried Selberherr
Affiliation:1. Institute for Microelectronics, TU Wien, Gu?hausstra?e 27–29/E360, 1040, Wien, Austria
Abstract:Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the I on/I off ratio of the device improves.
Keywords:Non-equilibrium Green’  s function  Band to band tunneling  Carbon nanotube transistors
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