11.4 Gbit/s silicon bipolar multiplexer IC employing 2 mu m lithography transistors |
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| Authors: | Schreiber H.U. Albers J.N. Bosch B.G. |
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| Affiliation: | Ruhr- Univ., Bochum, West Germany; |
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| Abstract: | A very high-speed 2:1 multiplexer IC operating up to 11.4 Gbit/s has been implemented. The circuit was fabricated using a 12 GHz non-polysilicon-emitter self-aligning bipolar process with 2 mu m lithography. Despite realisation in a relatively simple technology, this is the highest operating speed yet achieved with any technology.<> |
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