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Dehydroxylation action on surface of TiO2 films restrained by nitrogen carrier gas during atomic layer deposition process |
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| Authors: | Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan |
| Affiliation: | 1. Key Laboratory of Microelectronic Devices and Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China 2. Jiaxing Research and Commercialization Center for Microelectronics Equipment, Zhejiang Institute of Advanced Technology, Chinese Academy of Sciences, Jiaxing, 314006, China 3. Jiaxing Kemin Electronic Equipment & Technologies Co., Ltd, Zhejiang Institute of Advanced Technology, Chinese Academy of Sciences, Jiaxing, 314006, China |
| Abstract: | A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition (ALD) was investigated by X-ray photoelectron spectroscopy (XPS), contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas. |
| Keywords: | Atomic layer deposition TiO N Surface hydroxyl groups XPS Reaction model |
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