Low-voltage,high speed inkjet-printed flexible complementary polymer electronic circuits |
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| Authors: | Kang-Jun Baeg Soon-Won Jung Dongyoon Khim Juhwan Kim Dong-Yu Kim Jae Bon Koo Jordan R Quinn Antonio Facchetti In-Kyu You Yong-Young Noh |
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| Affiliation: | 1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga Jung-gu, Seoul 100-715, Republic of Korea;2. Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea;3. IT Materials and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea;4. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea;5. Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077, USA |
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| Abstract: | We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1–0.4 cm2 V?1 s?1 and low threshold voltages down to 5 V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend – a 7:3 wt% mixture of P(VDF-TrFE) and PMMA – was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (VDD) of 5 V and showed an oscillation frequency (fosc) as high as ～80 kHz at VDD = 30 V. Furthermore, the fosc of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, VDD, and the overlap capacitance in the circuit configuration. |
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