Thin film encapsulation for organic light emitting diodes using a multi-barrier composed of MgO prepared by atomic layer deposition and hybrid materials |
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Authors: | Eungtaek Kim Yuncheol Han Woohyun Kim Kyung Cheol Choi Hyeon-Gyun Im Byeong-Soo Bae |
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Affiliation: | 1. Department of Electrical Engineering, KAIST, Daejeon 305-701, Republic of Korea;2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea |
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Abstract: | We demonstrated an organic/inorganic multi-barrier and encapsulation for flexible OLED devices. The multi-barrier consisted of a silica nanoparticle-embedded hybrid nanocomposite, in short, S-H nanocomposite, and MgO, which were used as organic and inorganic materials, respectively. The S-H nanocomposite was spin-coated followed by UV curing. The thickness of the S-H nanocomposite was 200 nm, and 40 nm of MgO was deposited by atomic layer deposition (ALD) using Mg(CpEt)2 and H2O at 70 °C. The results of a Ca test showed that the 4.5 dyads of the MgO/S-H nanocomposite had a low water vapor transmission rate (WVTR) of 4.33 × 10?6 g/m2/day and an optical transmittance of 84%. The normalized luminance degradation of the thin film encapsulated OLED was also identical to that of glass-lid encapsulation after 1000 h of the real operation time. We proposed low temperature ALD as a deposition method to create relatively thin film for OLED passivation without degradation, such as creation of dark spots. The results confirmed that it may be feasible for our multi-barrier to passivate flexible OLEDs devices. |
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Keywords: | Thin film encapsulation Multi-barrier ALD MgO S-H nanocomposite OLEDs |
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