Megahertz operation of flexible low-voltage organic thin-film transistors |
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Authors: | Ute Zschieschang Robert Hofmockel Reinhold Rödel Ulrike Kraft Myeong Jin Kang Kazuo Takimiya Tarek Zaki Florian Letzkus Jörg Butschke Harald Richter Joachim N. Burghartz Hagen Klauk |
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Affiliation: | 1. Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;2. Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima, Japan;3. Institute for Nano- and Microelectronic Systems (INES), University of Stuttgart, Germany;4. Institut für Mikroelektronik/IMS CHIPS, Stuttgart, Germany |
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Abstract: | Bottom-gate, top-contact (inverted staggered) organic thin-film transistors with a channel length of 1 μm have been fabricated on flexible plastic substrates using the vacuum-deposited small-molecule semiconductor 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT). The transistors have an effective field-effect mobility of 1.2 cm2/V s, an on/off ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 ns per stage at a supply voltage of 3 V. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. |
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Keywords: | Organic thin-film transistors Flexible organic circuits |
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