Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoOx solution contact treatment

We report on a newly developed solution process using MoO₃ for reducing source and drain (S/D) electrodes in organic thin-film transistor (TFT). By taking advantage of the difference in surface wettability between the gate dielectric layer and the S/D electrodes, the electrode treatment using the MoO_x solution was applied to polymer TFT with short channel lengths less than 10 μm. The contact resistance was noticeably reduced at the interface of the S/D electrodes in a polymer TFT using a pBTTT-C16. Furthermore, the field effect mobility for this TFT was enhanced from 0.03 to 0.1 cm²/V s. Most notably, the threshold voltage (V_th) shift under gated bias stress was less than 0.2 V after 10⁵ s, which is comparable to that of conventional poly crystalline Si TFT.