High performance inkjet-printed C60 fullerene thin-film transistors: Toward a low-cost and reproducible solution process |
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Authors: | Woogun Kang Masatoshi Kitamura Yasuhiko Arakawa |
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Affiliation: | 1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan;2. Institute of Industrial Science (IIS), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan;3. Graduate School of Engineering, Kobe University, 1-1, Rokkodaicho, Nada, Kobe 657-8501, Japan |
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Abstract: | We have demonstrated high performance inkjet-printed n-channel thin-film transistors (TFTs) using C60 fullerene as a channel material. Highly uniform amorphous C60 thin-film patterns were fabricated on a solution-wettable polymer gate dielectric layer by inkjet-printing and vacuum drying process. Fabricated C60 TFTs shows great reproducibility and high performance; field-effect mobilities of 2.2–2.4 cm2 V?1 s?1, threshold voltages of 0.4–0.6 V, subthreshold slopes of 0.11–0.16 V dec?1 and current on/off ratio of 107–108 in a driving voltage of 5 V. This is due to the efficient annealing process that extracting the solvent residue and the formation of low trap-density gate dielectric surface. |
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