Photo-patternable polyimide gate insulator with fluorine groups for improving performance of 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiopene (C10-BTBT) thin-film transistors |
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Authors: | Jong-Myung Won Hye Jung Suk Duyoung Wee Yun Ho Kim Jae-Won Ka Jinsoo Kim Taek Ahn Mi Hye Yi Kwang-Suk Jang |
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Affiliation: | 1. Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;2. Department of Applied Chemistry and Biological Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 305-764, Republic of Korea;3. Department of Chemistry, Kyungsung University, 314-79 Daeyeon-dong, Nam-gu, Busan 608-736, Republic of Korea |
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Abstract: | Surface properties of gate insulators strongly affect the device performance of organic thin-film transistors (OTFTs). To improve the performance of OTFTs, we have developed photo-sensitive polyimide gate insulator with fluorine groups. The polyimide gate insulator film could be easily patterned by selective UV exposure without any photoinitiator. The polyimide gate insulator film, fabricated at 130 °C, has a dielectric constant of 2.8 at 10 kHz, and leakage current density of <1.6 × 10?10 A/cm2 while biased from 0 to 90 V. To investigate the potential of the polyimide with fluorine groups as a gate insulator, we fabricated C10-BTBT TFTs. The field-effect mobility and the on/off current ratio of the TFTs were measured to be 0.76 ± 0.09 cm2/V s and >106, respectively. |
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Keywords: | Gate insulator Polyimide Fluorine groups Photo-patternability Organic thin-film transistor |
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