Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors |
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Authors: | Yuntae Kim Jeongkyun Roh Ji-Hoon Kim Chan-mo Kang In-Nam Kang Byung Jun Jung Changhee Lee Do-Hoon Hwang |
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Affiliation: | 1. Department of Chemistry, and Chemistry Institute for Functional Materials, Pusan National University, Busan 609-735, Republic of Korea;2. School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Republic of Korea;3. Department of Chemistry, The Catholic University of Korea, Bucheon 420-743, Republic of Korea;4. Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea |
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Abstract: | A polyhedral oligomeric silsesquioxane (POSS)-based insulating material with photocurable propyl-cinnamate groups (POSS-CYNNAM) was designed and synthesized through simple single step reaction for use as a gate dielectric in organic thin-film transistors (OTFT). POSS-CYNNAM was soluble in common organic solvents and formed a smooth thin film after spin-casting. A thin film of POSS-CYNNAM was cross-linked and completely solidified under UV irradiation without the use of additives such as photoacid generators or photoradical initiators. ITO/insulator/Au devices were fabricated and characterized to measure the dielectric properties of POSS-CYNNAM thin films, such as leakage current and capacitance. A pentacene-based OTFT using the synthesized insulator as the gate dielectric layer was fabricated on the transparent indium tin oxide (ITO) electrode, and its performance was compared to OTFTs using thermally cross-linked poly(vinyl phenol) (PVP) as the insulator. The fabricated POSS-CYNNAM OTFT showed a comparable performance to devices based on the PVP insulator with 0.1 cm2/Vs of the field effect mobility and 4.2 × 105 of an on/off ratio. |
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Keywords: | Polyhedral oligomeric silsesquioxane Photocurable cinnamate Insulator |
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