Improved hole-transporting properties of Ir complex-doped organic layer for high-efficiency organic light-emitting diodes |
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| Authors: | Yanfang Lv Pengchao Zhou Na Wei Kuijuan Peng Jianning Yu Bin Wei Zixing Wang Chong Li |
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| Affiliation: | 1. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, PR China;2. The Department of Chemistry, Shanghai University, 99 Shangda Road, Shanghai 200444, PR China;3. Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Wenyuan Road 9, Nanjing 210046, PR China |
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| Abstract: | We have investigated the hole-transporting properties of three different Ir complexes doped 4,4′,4″-tri (N-carbazolyl) triphenylamine (TCTA) using a series of hole-only devices. The improvement of hole-transporting ability was depended on the species of Ir complexes and their doping concentrations. We attributed the improved performance to their strong electron-accepting abilities or hole-transfer capabilities. Yellow organic light-emitting diodes (OLEDs) based on bis(2-phenylbenzothiazolato)(acetylacetonate)iridium bt2Ir(acac) were fabricated by utilizing this method with optimized doping concentration. The best electroluminescent (EL) performance of maximum 83.6 lm/W was obtained for the yellowing-emitting OLED by doping of Firpic into TCTA hole transport layer, compared with the cases of doping of Ir(ppy)3 into TCTA and doping of Ir(bpiq)2acac into TCTA. Moreover, the turn-on voltage of device decreased to 2.2 V, which was corresponding to the optical band gap of the emitter. |
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